US 12,332,573 B2
Method for determining defectiveness of pattern based on after development image
Marleen Kooiman, Eindhoven (NL); Maxim Pisarenco, Son en Breugel (NL); Abraham Slachter, Waalre (NL); Mark John Maslow, Eindhoven (NL); Bernardo Andres Oyarzun Rivera, Rotterdam (NL); Wim Tjibbo Tel, Helmond (NL); and Ruben Cornelis Maas, Utrecht (NL)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 17/640,792
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Sep. 3, 2020, PCT No. PCT/EP2020/074663
§ 371(c)(1), (2) Date Mar. 4, 2022,
PCT Pub. No. WO2021/043936, PCT Pub. Date Mar. 11, 2021.
Claims priority of application No. 19195527 (EP), filed on Sep. 5, 2019; application No. 19196323 (EP), filed on Sep. 10, 2019; application No. 19218296 (EP), filed on Dec. 19, 2019; application No. 20169181 (EP), filed on Apr. 10, 2020; application No. 20176236 (EP), filed on May 25, 2020; and application No. 20189952 (EP), filed on Aug. 6, 2020.
Prior Publication US 2022/0342316 A1, Oct. 27, 2022
Int. Cl. G06T 7/33 (2017.01); G03F 7/00 (2006.01); G06T 7/00 (2017.01)
CPC G03F 7/7065 (2013.01) [G03F 7/705 (2013.01); G03F 7/70625 (2013.01); G06T 7/001 (2013.01); G06T 7/33 (2017.01); G06T 2207/10061 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/20084 (2013.01); G06T 2207/30148 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate, the method comprising:
obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location, the after etch image including etched features corresponding to the plurality of features; and
training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image,
wherein the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.