CPC G03F 7/70033 (2013.01) [G02B 7/182 (2013.01); G03F 7/7055 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01)] | 20 Claims |
1. A method of manufacturing a semiconductor device, comprising:
generating a target droplet in a vacuum chamber of an extreme ultraviolet (EUV) lithography system;
supplying the target droplet through a target droplet generator;
generating an excitation laser through an excitation laser source;
guiding the excitation laser to the target droplet through an optical system;
irradiating the target droplet with the excitation laser, thereby generating EUV radiation;
reflecting a return beam of the excitation laser to a final focus metrology (FFM) module of the EUV lithography system though the same optical system;
measuring aberration of the return beam of the excitation laser using the FFM module;
determining Zernike coefficients of a Zernike polynomial that corresponds to the aberration;
determining a change in a beam profile of the return beam based on at least one Zernike coefficient of the Zernike polynomial; and
exposing a resist layer on a substrate to the EUV radiation.
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