US 12,332,571 B2
Target control in extreme ultraviolet lithography systems using aberration of reflection image
Ting-Ya Cheng, Taipei (TW); Han-Lung Chang, Kaohsiung (TW); Shi-Han Shann, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); and Yen-Shuo Su, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 13, 2023, as Appl. No. 18/508,195.
Application 18/508,195 is a continuation of application No. 17/751,545, filed on May 23, 2022, granted, now 11,860,544.
Application 17/751,545 is a continuation of application No. 16/926,489, filed on Jul. 10, 2020, granted, now 11,340,531, issued on May 24, 2022.
Prior Publication US 2024/0085797 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); G02B 7/182 (2021.01); H05G 2/00 (2006.01)
CPC G03F 7/70033 (2013.01) [G02B 7/182 (2013.01); G03F 7/7055 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
generating a target droplet in a vacuum chamber of an extreme ultraviolet (EUV) lithography system;
supplying the target droplet through a target droplet generator;
generating an excitation laser through an excitation laser source;
guiding the excitation laser to the target droplet through an optical system;
irradiating the target droplet with the excitation laser, thereby generating EUV radiation;
reflecting a return beam of the excitation laser to a final focus metrology (FFM) module of the EUV lithography system though the same optical system;
measuring aberration of the return beam of the excitation laser using the FFM module;
determining Zernike coefficients of a Zernike polynomial that corresponds to the aberration;
determining a change in a beam profile of the return beam based on at least one Zernike coefficient of the Zernike polynomial; and
exposing a resist layer on a substrate to the EUV radiation.