US 12,332,568 B2
Metal oxide resists for EUV patterning and methods for developing the same
Hamed Hajibabaeinajafabadi, Albany, NY (US); and Akiteru Ko, Albany, NY (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 3, 2022, as Appl. No. 17/880,479.
Prior Publication US 2024/0045337 A1, Feb. 8, 2024
Int. Cl. G03F 7/38 (2006.01); G03F 7/004 (2006.01); G03F 7/36 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC G03F 7/38 (2013.01) [G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/36 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/76898 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing a substrate, the method comprising: receiving a first substrate with an exposed metal oxide resist in a processing chamber, the exposed metal oxide resist comprising exposed portions and unexposed portions; flowing a selective gas over the exposed metal oxide resist, wherein the selective gas increases a selectivity between the exposed portions and unexposed portions of the exposed metal oxide resist to a developing gas, the selective gas comprising boron trichloride (BCl3); and after flowing the selective gas, flowing the developing gas over the exposed metal oxide resist in the processing chamber.