US 12,332,567 B2
Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound
Keisuke Niida, Joetsu (JP); Yusuke Kai, Joetsu (JP); and Tsutomu Ogihara, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Dec. 7, 2021, as Appl. No. 17/544,592.
Claims priority of application No. 2020-214294 (JP), filed on Dec. 23, 2020.
Prior Publication US 2022/0221793 A1, Jul. 14, 2022
Int. Cl. G03F 7/11 (2006.01); C07F 7/18 (2006.01); C08G 77/04 (2006.01); C09D 183/04 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/11 (2013.01) [C07F 7/1804 (2013.01); C08G 77/04 (2013.01); C09D 183/04 (2013.01); H01L 21/0274 (2013.01)] 19 Claims
 
1. A composition for forming a silicon-containing resist underlayer film, comprising one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1):

OG Complex Work Unit Chemistry
wherein in the general formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; R2 represents an alkoxy group, an acyloxy group, or a halogen atom; n1 represents 0, 1, or 2; R3 and R4 each independently represent a hydrogen atom, or represent an organic group having 1 to 6 carbon atoms optionally containing a nitrogen atom, an oxygen atom, a sulfur atom, a halogen atom, or a silicon atom, R3 and R4 being optionally bonded with each other to form a ring; R5 represents a monovalent organic group having 1 to 30 carbon atoms; n2 represents 0, 1, 2, or 3; Y represents a single bond or a divalent organic group having 1 to 6 carbon atoms optionally containing a silicon atom; and Z represents a carbon atom or a silicon atom.