US 12,332,565 B2
Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process
Tsutomu Ogihara, Joetsu (JP); Tsukasa Watanabe, Joetsu (JP); Yusuke Biyajima, Joetsu (JP); Masahiro Kanayama, Joetsu (JP); and Ryo Mitsui, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Jun. 23, 2023, as Appl. No. 18/340,442.
Application 18/340,442 is a division of application No. 16/660,992, filed on Oct. 23, 2019.
Claims priority of application No. 2018-218483 (JP), filed on Nov. 21, 2018.
Prior Publication US 2023/0333472 A1, Oct. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/075 (2006.01); C07F 7/18 (2006.01); C08G 77/14 (2006.01); C08G 77/18 (2006.01); C08G 77/24 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/36 (2006.01)
CPC G03F 7/0752 (2013.01) [C07F 7/1804 (2013.01); C08G 77/14 (2013.01); C08G 77/18 (2013.01); C08G 77/24 (2013.01); G03F 7/0751 (2013.01); G03F 7/0757 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/36 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A composition for forming a silicon-containing resist underlayer film for EUV lithography, comprising:
a thermosetting silicon-containing material; and
a crosslinking catalyst, wherein
the thermosetting silicon-containing material comprises:
(i) one or more of
a repeating unit shown by the following general formula (Sx-1),
a repeating unit shown by the following general formula (Sx-2), and
a partial structure shown by the following general formula (Sx-3),

OG Complex Work Unit Chemistry
wherein R1 represents an iodine-containing organic group shown by the following general formula (Sx-R1):

OG Complex Work Unit Chemistry
wherein R11 represents a single bond; R12 represents a monovalent organic group having 1 to 10 carbon atoms, a hydroxyl group, or a halogen atom other than iodine; n1 is 1, 2, or 3; and n2 is 0, 1, or 2; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms, and
(ii) one or more of partial structures shown by the following formulae (Sx-x),

OG Complex Work Unit Chemistry