	US 12,332,561 B2
	Emitter oxidation uniformity within a wafer
Benjamin Kesler, Sunnyvale, CA (US); Ajit Vijay Barve, San Jose, CA (US); and Guowei Zhao, Milpitas, CA (US)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on Jan. 14, 2022, as Appl. No. 17/648,012.
Application 17/648,012 is a division of application No. 16/244,842, filed on Jan. 10, 2019, granted, now 11,239,638.
Claims priority of provisional application 62/726,815, filed on Sep. 4, 2018.
Prior Publication US 2022/0140573 A1, May 5, 2022
Int. Cl. G03F 1/00 (2012.01); G03F 1/50 (2012.01)

CPC G03F 1/50 (2013.01) [G03F 1/00 (2013.01)]

20 Claims

1. A mask, comprising:

a plurality of sub-masks having trench features associated with forming a plurality of trenches for vertical cavity surface emitting lasers (VCSELs) on or within a wafer,

wherein, for each sub-mask of the plurality of sub-masks, a distance between the trench features of the sub-mask is constant, and

wherein the distance between the trench features of at least one sub-mask, of the plurality of sub-masks, is different from the distance between the trench features of one or more other sub-masks, of the plurality of sub-masks, based on a predicted variation in an oxidation rate of an oxidation layer associated with the wafer.