US 12,332,405 B2
Systems and methods for single-photon emission
Vladimir M. Shalaev, West Lafayette, IN (US); Alexandra Boltasseva, West Lafayette, IN (US); Alexei Lagutchev, West Lafayette, IN (US); Alexander Senichev, West Lafayette, IN (US); Zachariah O. Martin, West Lafayette, IN (US); Demid Sychev, West Lafayette, IN (US); Samuel Peana, West Lafayette, IN (US); Xiaohui Xu, Lafayette, IN (US); Omer Yesilyurt, West Lafayette, IN (US); and Vahagn Mkhitaryan, West Lafayette, IN (US)
Assigned to Purdue Research Foundation, West Lafayette, IN (US)
Filed by Purdue Research Foundation, West Lafayette, IN (US)
Filed on Apr. 5, 2022, as Appl. No. 17/713,850.
Claims priority of provisional application 63/297,508, filed on Jan. 7, 2022.
Claims priority of provisional application 63/170,569, filed on Apr. 5, 2021.
Prior Publication US 2022/0317335 A1, Oct. 6, 2022
Int. Cl. G02B 1/00 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); G02B 5/22 (2006.01)
CPC G02B 1/002 (2013.01) [G02B 5/22 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); G02B 2207/101 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of fabricating a single photon emitting material, comprising:
(a) interfacing a first material with a second material on a surface of a film stack, wherein the first material includes silicon nitride; and
(b) energetically activating the interface by annealing the interface of the first material and the second material.