| CPC G01S 17/931 (2020.01) [G01S 7/4804 (2013.01); G01S 17/933 (2013.01); H01S 5/183 (2013.01)] | 18 Claims |
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1. A vehicle apparatus, the device comprising:
a vehicle comprising a drive mechanism, the drive mechanism being configured to cause the vehicle to move from a first location to a second location; and
a module device comprising
a housing, having an exterior region and an interior region, the exterior region having a display portion and a sensing portion and a detecting portion;
a laser device configured to emit electromagnetic radiation having 850 to 1550 nm wavelength range and spatially disposed to include an aperture configured on the sensing portion; and
a circuit for a photodetector comprising:
a first terminal;
a second terminal;
a silicon (Si) substrate comprising a surface region;
a buffer material comprising a compound semiconductor (CS) material deposited on the surface region of the Si substrate using direct heteroepitaxy such that the CS material is characterized by a first bandgap characteristic, a first thermal characteristic, a first polarity, and a first crystalline characteristic, and the silicon substrate is characterized by a second bandgap characteristic, a second thermal characteristic, a second polarity, and a second crystalline characteristic;
an array of photodetectors, the array being characterized by N and M pixel elements, where N is an integer greater than 7, and M is an integer greater than 0; each of the pixel elements having a characteristic length ranging from 0.3 micrometers to 30 micrometers, each of the photodetectors comprising:
an n-type material comprising an InP material comprising a silicon impurity having a concentration ranging from 3E17 cm-3 to 5E18 cm-3;
an absorption material overlying the n-type material, the absorption material comprising a InGaAs containing material, the absorption material being primarily free from any impurity;
a p-type material overlying the absorption material, the p-type material comprising a zinc impurity or a beryllium impurity having a concentration ranging from 3E17 cm-3 to 5E18 cm-3;
a first electrode coupled to the n-type material and coupled to the first terminal;
a second electrode coupled to the p-type material and coupled to the second terminal to define a two terminal device;
an illumination region characterized by an aperture region to allow a plurality of photons to interact with the CS material and be absorbed by a portion of the absorption material to cause a generation of mobile charge carriers that produce an electric current between the first terminal and the second terminal;
a responsivity (Amperes/Watt) greater than 0.1 Amperes/Watt characterizing the circuit; and
a photodiode quantum efficiency greater than 10% characterizing the circuit.
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