US 12,332,271 B2
Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device
Thoralf Kautzsch, Dresden (DE); Steffen Bieselt, Stadt Wehlen (DE); Heiko Froehlich, Radebeul (DE); Andre Roeth, Dresden (DE); Maik Stegemann, Pesterwitz (DE); Mirko Vogt, Dresden (DE); and Bernhard Winkler, Regensburg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 28, 2022, as Appl. No. 17/851,292.
Application 17/851,292 is a division of application No. 16/860,528, filed on Apr. 28, 2020, granted, now 11,422,151.
Application 16/860,528 is a division of application No. 15/200,299, filed on Jul. 1, 2016, granted, now 10,684,306, issued on Jun. 16, 2020.
Claims priority of application No. 10 2015 212 669.2 (DE), filed on Jul. 7, 2015.
Prior Publication US 2022/0326275 A1, Oct. 13, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G01P 15/125 (2006.01); B81C 1/00 (2006.01); G01P 15/08 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC G01P 15/125 (2013.01) [B81C 1/00039 (2013.01); G01P 15/0802 (2013.01); H01L 21/02104 (2013.01); H01L 21/02697 (2013.01); H01L 21/7688 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/013 (2013.01); G01P 2015/0828 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A capacitive microelectromechanical device, comprising:
a semiconductor substrate comprising a base portion and sidewall portions that extend from the base portion, wherein a recess is defined by the base portion and the sidewall portions;
a support structure arranged within the recess, wherein the support structure is fixedly connected to the base portion of the semiconductor substrate and a longest dimension of the support structure extends from the base portion in a direction parallel with the sidewall portions;
an electrode element fixedly connected directly to the support structure, wherein the electrode element is a plate having a thickness dimension that extends in the direction parallel to the sidewall portions, wherein the support structure extends from the base portion through the electrode element along the thickness dimension;
a spring element arranged within the recess and connected to the support structure;
a seismic mass arranged within the recess and connected to the support structure by the spring element so that the seismic mass is displaceable with respect to the electrode element in the direction parallel to the sidewall portions; and
wherein the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element, the displacement being measured in the direction parallel to the sidewall portions.