| CPC G01N 27/305 (2013.01) [C23C 14/0036 (2013.01); C23C 14/08 (2013.01); C23C 14/352 (2013.01); C23C 14/5806 (2013.01); G01N 27/3275 (2013.01); G01N 27/36 (2013.01)] | 4 Claims |

|
1. A CuV2O6-based photoelectric sensor, wherein the CuV2O6-based photoelectric sensor is prepared by a method comprising the following steps:
1) acquiring a CuV2O6 thin film through a direct-current reactive magnetron co-sputtering method; and
2) loading an 8-hydroxyquinoline solution on the CuV2O6 thin film through a spin-coating method to acquire an 8-hydroxyquinoline-modified CuV2O6 photoelectric sensor.
|