| CPC C30B 23/02 (2013.01) [C23C 14/00 (2013.01); C23C 16/4411 (2013.01); C30B 25/08 (2013.01)] | 24 Claims |

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1. A reaction chamber for a reactor for deposition of layers of semiconductor material on substrates, comprising a tube made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis is vertical, wherein the tube has a cylindrical inner interspace which extends along the entire length of the tube and which is adapted to accommodate a flowing liquid; the chamber further comprising an annular closing element made of quartz and fixed to a first lower end of the tube so as to close the interspace preventing the liquid flow out of the interspace at the bottom; wherein the closing element has an annular recess facing the interspace so that the flowing liquid can reach the annular recess at the bottom;
the chamber comprising furthermore a set of internal conduits internal to the interspace, wherein said internal conduits stretch from a first lower region of the tube to a second upper region of the tube to facilitate circulation of the flowing liquid in the interspace, whereby flowing liquid flows in the interspace first outside of the internal conduits and then inside of the internal conduits.
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