US 12,331,421 B2
Edge removal for through-resist plating in an electro-plating cup assembly
Bryan L. Buckalew, Tualatin, OR (US); and Stephen J. Banik, Happy Valley, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/779,828
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Nov. 24, 2020, PCT No. PCT/US2020/062111
§ 371(c)(1), (2) Date May 25, 2022,
PCT Pub. No. WO2021/108466, PCT Pub. Date Jun. 3, 2021.
Claims priority of provisional application 62/941,519, filed on Nov. 27, 2019.
Prior Publication US 2023/0012414 A1, Jan. 12, 2023
Int. Cl. C25D 17/06 (2006.01); H01L 23/00 (2006.01)
CPC C25D 17/06 (2013.01) [H01L 24/02 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/0239 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/0132 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An electroplating cup assembly configured to support a wafer comprising:
a cup bottom with an opening configured to allow exposure of the wafer positioned in the electroplating cup assembly to an electroplating solution, the wafer comprising a seed layer and a sacrificial layer disposed along a perimeter of the wafer on the seed layer;
a lip seal coupled to the cup bottom, the lip seal comprising a sealing structure that extends upwardly along an inner edge of the lip seal to a peak that is configured to be in contact with a seed layer of the wafer and a sacrificial layer of the wafer; and
an electrical contact structure that forms a seal with the lip seal, the electrical contact structure configured to be coupled with the seed layer of at a perimeter of the wafer.