US 12,331,403 B2
Substrate processing method and substrate processing device
Munehito Kagaya, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/754,373
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Sep. 29, 2020, PCT No. PCT/JP2020/036939
§ 371(c)(1), (2) Date Mar. 31, 2022,
PCT Pub. No. WO2021/070682, PCT Pub. Date Apr. 15, 2021.
Claims priority of application No. 2019-185446 (JP), filed on Oct. 8, 2019.
Prior Publication US 2022/0333249 A1, Oct. 20, 2022
Int. Cl. H01L 21/306 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/56 (2013.01) [C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01J 37/32422 (2013.01); H01J 2237/334 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
embedding a first insulating film in a recess of a substrate by repeating forming a first adsorption layer on the substrate by supplying a silicon-containing gas and causing first plasma of a reaction gas to react with the first adsorption layer by generating the first plasma of the reaction gas; and
etching the first insulating film by generating plasma of an etching gas, and
after the etching, embedding a second insulating film having a higher etching resistance than the first insulating film in the recess by repeating forming a second adsorption layer on the substrate by supplying the silicon-containing gas and causing second plasma of the reaction gas to react with the second adsorption layer by generating the second plasma of the reaction gas,
wherein the causing the first plasma to react with the first adsorption layer includes controlling a shape of the first insulating film embedded in the recess after etching by controlling plasma generation parameters, and
wherein the controlling the plasma generation parameters includes controlling energy of ions incident on the second adsorption layer in the causing the second plasma to react with the second adsorption layer in the embedding the second insulating film in the recess to be higher than the energy of ions incident on the first adsorption layer in the causing the first plasma to react with the first adsorption layer in the embedding the first insulating film in the recess.