US 12,331,402 B2
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
Rachel E. Batzer, Tigard, OR (US); Huatan Qiu, Portland, OR (US); Bhadri N. Varadarajan, Beaverton, OR (US); Patrick Girard Breiling, Tigard, OR (US); Bo Gong, Sherwood, OR (US); Will Schlosser, Tigard, OR (US); Zhe Gui, Beaverton, OR (US); Taide Tan, West Linn, OR (US); and Geoffrey Hohn, Portland, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on May 31, 2024, as Appl. No. 18/679,771.
Application 18/679,771 is a division of application No. 18/163,828, filed on Feb. 2, 2023, granted, now 12,000,047.
Application 16/820,003 is a division of application No. 15/378,854, filed on Dec. 14, 2016, granted, now 10,604,841, issued on Mar. 31, 2020.
Application 18/163,828 is a continuation of application No. 17/401,261, filed on Aug. 12, 2021, granted, now 11,608,559, issued on Mar. 21, 2023.
Application 17/401,261 is a continuation of application No. 16/820,003, filed on Mar. 16, 2020, granted, now 11,101,164, issued on Aug. 24, 2021.
Prior Publication US 2024/0318312 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); B05C 13/02 (2006.01); C23C 16/458 (2006.01)
CPC C23C 16/45565 (2013.01) [C23C 16/45572 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01L 21/67011 (2013.01); H01L 21/67017 (2013.01); H01L 21/67207 (2013.01); H01L 21/68735 (2013.01); H01L 21/68742 (2013.01); H01L 21/68757 (2013.01); H01L 21/68785 (2013.01); B05C 13/02 (2013.01); C23C 16/4581 (2013.01); C23C 16/4583 (2013.01); H01J 37/32642 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01); H01L 21/6715 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for use in processing substrates, the apparatus comprising: a showerhead having a plurality of heat transfer plenums all located in between a top surface of the showerhead and a bottom surface of the showerhead, the plurality of heat transfer plenums including a first plenum, a second plenum, and a third plenum: a fluid inlet port connected with the first plenum; a fluid outlet port connected with one of the heat transfer plenums; a plurality of flow channels located in between the top surface of the showerhead and the bottom surface of the showerhead, each flow channel connecting the second plenum with the third plenum and placing the second plenum in fluidic communication with the third plenum within the showerhead; a plurality of first flow restriction features positioned between the first plenum and the second plenum such that flow of fluid from the fluid inlet port and through the first plenum and the second plenum to the flow channels passes in between the first flow restriction features; a gas plenum located in between the top surface of the showerhead and the bottom surface of the showerhead; and a plurality of injectors leading from the gas plenum to the bottom surface of the showerhead.