US 12,331,398 B2
Method of forming metal oxide layer using deposition apparatus
Ming-Fa Wu, Kaohsiung (TW); Wen-Lung Ho, Hsinchu County (TW); and Jheng-Long Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/872,018.
Application 17/872,018 is a division of application No. 16/787,043, filed on Feb. 11, 2020.
Claims priority of provisional application 62/880,666, filed on Jul. 31, 2019.
Prior Publication US 2022/0364234 A1, Nov. 17, 2022
Int. Cl. C23C 16/40 (2006.01); C23C 16/04 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/4404 (2013.01) [C23C 16/042 (2013.01); C23C 16/403 (2013.01); C23C 16/4412 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/45591 (2013.01); C23C 16/52 (2013.01); H01L 21/67011 (2013.01); C23C 16/4408 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a metal oxide layer, comprising:
providing a substrate in a process chamber of a deposition apparatus, wherein the substrate has a target layer formed thereon;
introducing a first gas and a second gas into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, wherein the shower head is coated with a hydrophobic film, wherein when introducing the first gas and the second gas into the process chamber, controlling the first gas and the second gas within an upper part of the process chamber, while preventing the first gas and the second gas from entering a lower part of the process chamber by using a flow control ring, wherein the flow control ring is disposed around a wafer platen which is below the shower head, and the control ring is separated from the wafer platen;
forming a patterned photoresist layer on the metal oxide film;
patterning the metal oxide film by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film; and
patterning the target layer by using the patterned metal oxide film as a mask.