US 12,331,393 B2
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Kimihiko Nakatani, Toyama (JP); and Ryuji Yamamoto, Tokyo (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Dec. 6, 2022, as Appl. No. 18/076,091.
Claims priority of application No. 2021-199570 (JP), filed on Dec. 8, 2021.
Prior Publication US 2023/0175116 A1, Jun. 8, 2023
Int. Cl. C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/042 (2013.01) [C23C 16/45523 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/02205 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(A) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface;
(B) supplying a film-forming agent to the substrate after forming the inhibitor layer on the first surface to form a film on the second surface; and
(C) regulating a density of adsorption sites on the first surface before performing (A),
wherein a width of an inhibitor molecule constituting the inhibitor layer is defined as WI, a spacing between adjacent adsorption sites on the first surface is defined as DA, a width of a molecule X constituting a predetermined substance contained in the film-forming agent is defined as WP,
wherein WP>DA−WI is satisfied when WI is smaller than DA, and
wherein WP>DAx−WI is satisfied when WI is larger than DA, where x is a smallest integer that satisfies WI<DAx.