US 12,331,392 B2
Deposition system and method
Wen-Hao Cheng, Hsinchu (TW); Hsuan-Chih Chu, Hsinchu (TW); and Yen-Yu Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,911.
Application 18/447,911 is a division of application No. 17/384,310, filed on Jul. 23, 2021, granted, now 11,851,751.
Prior Publication US 2023/0383400 A1, Nov. 30, 2023
Int. Cl. C23C 14/56 (2006.01); B08B 5/02 (2006.01); B08B 7/02 (2006.01); B08B 7/04 (2006.01); B08B 9/00 (2006.01); B08B 13/00 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01)
CPC C23C 14/564 (2013.01) [B08B 5/02 (2013.01); B08B 7/028 (2013.01); B08B 7/04 (2013.01); B08B 9/00 (2013.01); B08B 13/00 (2013.01); C23C 14/34 (2013.01); C23C 14/50 (2013.01); B08B 2209/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing a material from a target onto a substrate in a substrate process chamber, comprising:
determining a condition of a substrate process chamber;
placing the substrate process chamber in a chamber purging mode based on the condition of the substrate process chamber;
applying vibration to a collimator in the substrate process chamber by applying the vibration to the collimator with one or more vibration generation units embedded within the collimator; and
applying scrubbing gas to the collimator by introducing the scrubbing gas through one or more microchannels embedded within the collimator.