CPC C23C 14/35 (2013.01) [C23C 14/0057 (2013.01); C23C 14/10 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01); C23C 14/3407 (2013.01); C23C 14/56 (2013.01)] | 20 Claims |
1. A sputtering system, comprising:
a substrate;
a first target on a first cathode,
wherein the first target comprises a first coating material source;
a second target on a second cathode, and
wherein the second target comprises a second coating material source;
a cathode power supply configured to power the first cathode and the second cathode; and
a vacuum chamber configured to be filled with a mixture of argon gas and helium gas when a first coating is deposited onto a first side of the substrate and to be filled with argon gas, without helium gas, when a second coating is deposited onto a second side of the substrate,
wherein the first coating has a first thickness,
wherein the second side of the substrate is different from the first side of the substrate,
wherein the first coating includes one or more first materials that are different from one or more second materials of the second coating,
wherein the second coating has a second thickness that is greater than the first thickness, and
wherein, in the mixture of argon gas and helium gas, a flow rate for argon gas is configured to be between 200 standard cubic centimeters per minute (SCCM) and 500 SCCM and a helium gas contribution is configured to be between 9% and 60%.
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