	US 12,331,239 B2
	Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt
Joannes Theodorus Valentinus Hoogboom, Ludwigshafen (DE); Jhih Jheng Ke, Taoyuan (TW); Che Wei Wang, Taoyuan (TW); Andreas Klipp, Ludwigshafen (DE); and Yi Ping Cheng, Taoyuan (TW)
Assigned to BASF SE, Ludwigshafen am Rhein (DE)
Filed by BASF SE, Ludwigshafen am Rhein (DE)
Filed on Nov. 27, 2023, as Appl. No. 18/519,571.
Application 18/519,571 is a continuation of application No. 16/765,371, abandoned, previously published as PCT/EP2018/083683, filed on Dec. 5, 2018.
Claims priority of application No. 17206096 (EP), filed on Dec. 8, 2017; and application No. 18180361 (EP), filed on Jun. 28, 2018.
Prior Publication US 2024/0093089 A1, Mar. 21, 2024
Int. Cl. C23F 1/20 (2006.01); C07D 265/30 (2006.01); C09K 13/00 (2006.01); C23F 1/44 (2006.01); H01L 21/311 (2006.01)

CPC C09K 13/00 (2013.01) [C07D 265/30 (2013.01); C23F 1/20 (2013.01); C23F 1/44 (2013.01); H01L 21/31111 (2013.01)]

19 Claims

1. A method comprising:

contacting a composition with a substrate,

wherein the composition comprises:

(A) at least one solubilizer, selected from the group consisting of

a compound of formula I:

wherein R¹is at least one selected from the group consisting of hydrogen and —C(O)—R²wherein R²is selected from the group consisting of hydrogen and alkyl having 1, 2, 3 or 4 carbon atoms;

a compound of formula II:

wherein R³is alkyl having 1, 2, 3 or 4 carbon atoms;

trimethylamine-N-oxide,

triethylamine-N-oxide,

triethanolamine-N-oxide,

pyridine-N-oxide,

N-ethylpyrrolidine-N-oxide, and

mixtures thereof;

(B) an etchant comprising fluoride anions;

(C) at least one corrosion inhibitor, selected from the group consisting of benzotriazole which is unsubstituted or substituted once or twice independently by C_1-4-alkyl, amino-C_1-4-alkyl, phenyl, thiophenyl, halogen, hydroxy, nitro and/or thiol;

ethylene urea, ethylene thiourea, 1,2,4-triazole, 5-aminotetrazole, 5-amino-1,3,4-thiadiazol-2-thiol, 3-amino-1H-1,2,4 triazole, 3,5-diamino-1,2,4-triazole, tolyltriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, naphthotriazole, 1H-tetrazole-5-acetic acid, 1-phenyl-2-tetrazoline-5-thione, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, imidazole, benzimidazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, 2H-imidazole-2-thione, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol, benzothiazole, tritolyl phosphate, indazole, adenine, cytosine, guanine, thymine, 2,2′-azanediyldiacetic acid, propanethiol, citric acid, ascorbic acid, thiourea, 1,1,3,3-tetramethylurea, urea, uric acid, glycine, dodecylphosphonic acid, oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid, and mixtures thereof;

(D) at least one chelating agent selected from the group consisting of histidine, 1,2-cyclohexylenedinitrilotetraacetic acid, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, acetylacetonate, 2,2′-azanediyldiacetic acid, ethylenediaminetetraacetic acid, etidronic acid, methanesulfonic acid, acetylacetone, 1,1,1-trifluoro-2,4-pentanedione, 1,4-benzoquinone, 8-hydroxyquinoline, salicylidene aniline; tetrachloro-1,4-benzoquinone, 2-(2-hydroxyphenyl)-benzoxazol, 2-(2-hydroxyphenyl)-benzothiazole, hydroxyquinoline sulfonic acid, sulfosalicylic acid, salicylic acid, pyridine, 2-ethylpyridine, 2-methoxypyridine, 3-methoxypyridine, 2-picoline, dimethylpyridine, piperidine, piperazine, triethylamine, triethanolamine, ethylamine, methylamine, isobutylamine, tert-butylamine, tributylamine, dipropylamine, dimethylamine, diglycol amine, monoethanolamine, methyldiethanolamine, pyrrole, isoxazole, bipyridine, pyrimidine, pyrazine, pyridazine, quinoline, isoquinoline, indole, 1-methylimidazole, diisopropylamine, diisobutylamine, aniline, pentamethyldiethylenetriamine, acetoacetamide, ammonium carbamate, ammonium pyrrolidinedithiocarbamate, dimethyl malonate, methyl acetoacetate, N-methyl acetoacetamide, tetramethylammonium thiobenzoate, 2,2,6,6-tetramethyl-3,5-heptanedione, tetramethylthiuram disulfide, lactic acid, ammonium lactate, formic acid, propionic acid, gamma-butyrolactone, and mixtures thereof; and

(G) water,

wherein the method is suitable

for selectively etching a layer comprising an aluminum compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt;

for selectively removing from a substrate a layer comprising an aluminum compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt, and/or

for selectively removing from a surface of a semiconductor substrate a layer comprising an aluminum compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt.