| CPC C09K 11/883 (2013.01) [B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C09K 11/02 (2013.01); C09K 11/0883 (2013.01); C09K 11/703 (2013.01); C01P 2004/50 (2013.01); C01P 2004/64 (2013.01); C01P 2004/80 (2013.01)] | 11 Claims |
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1. A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles comprising a core comprising In and P and a shell comprising one or more layers, wherein
a peak wavelength (λ1MAX) of an emission spectrum (λ1) when the semiconductor nanoparticle aggregate is excited with excitation light of 450 nm in a state where the semiconductor nanoparticle aggregate is dispersed in a dispersion medium is from 515 nm to 535 nm and a full width at half maximum (FWHM1) of the emission spectrum (λ1) is 43 nm or less,
an emission spectrum (λ2) from each particle obtained by exciting the semiconductor nanoparticles constituting the semiconductor nanoparticle aggregate with excitation light of 445 nm satisfies all of following requirements (1) to (3):
(1) an average value of a full width at half maximum (FWHM2) of the emission spectrum (λ2) is 15 nm or more,
(2) a standard deviation (SD1) of a peak wavelength (λ2MAX) of the emission spectrum (λ2) is 12 nm or less, and
(3) a standard deviation (SD2) of the full width at half maximum (FWHM2) of the emission spectrum (λ2) is 2 nm or more.
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