| CPC C09K 11/025 (2013.01) [C08G 77/04 (2013.01); C08G 77/28 (2013.01); C08G 77/38 (2013.01); C08G 77/388 (2013.01); C09D 183/08 (2013.01); C09D 183/10 (2013.01); C09K 11/0883 (2013.01); C09K 11/565 (2013.01); C09K 11/70 (2013.01); C09K 11/703 (2013.01); G02F 1/133516 (2013.01); G02F 1/133528 (2013.01); G02F 1/133617 (2013.01); H05B 33/22 (2013.01); H10K 50/865 (2023.02); H10K 59/38 (2023.02); B32B 2457/20 (2013.01); B32B 2457/202 (2013.01); B32B 2457/206 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C09K 2323/00 (2020.08); C09K 2323/03 (2020.08); C09K 2323/031 (2020.08); C09K 2323/033 (2020.08); G02F 1/133565 (2021.01); G02F 2201/52 (2013.01); H10K 59/8792 (2023.02); H10K 2102/331 (2023.02)] | 20 Claims |

|
1. A display device comprising a light source comprising a plurality of light units; and a photoluminescent color filter layer disposed on the light source and comprising a layered structure,
wherein the layered structure comprises:
a photoluminescent layer comprising a quantum dot polymer composite;
a light absorption layer disposed on the photoluminescent layer, the light absorption layer comprising an absorptive color-filter material; and
a silicon containing layer disposed between the photoluminescent layer and the light absorption layer,
wherein the quantum dot polymer composite comprises a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix,
wherein the layered structure comprises a first section emitting first light and a second section emitting second light different from the first light,
wherein the plurality of light units comprises a first light unit corresponding to the first section and supplying excitation light to the first section and a second light unit corresponding to the second section and supplying excitation light to the second section,
wherein in the layered structure, the quantum dot polymer composite is patterned to correspond to the first section and the second section, respectively,
the silicon containing layer is patterned to correspond to the first section and the second section,
wherein the light absorption layer is patterned to have a first absorption section and a second absorption section corresponding to the first section and the second section, respectively, wherein the first absorption section is spaced apart from the second absorption section;
and
wherein a thickness of the silicon containing layer is greater than or equal to 100 nanometers and less than or equal to 3 micrometers.
|