| CPC C01B 32/963 (2017.08) [C30B 23/005 (2013.01); C30B 23/02 (2013.01); C30B 25/165 (2013.01); C30B 29/36 (2013.01); C30B 29/66 (2013.01); C01P 2004/30 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01)] | 57 Claims | 

| 
               1. A source material for use as a starting material in a vapor deposition process to grow an SiC boule, the source material defining a volumetric shape of SiC, the volumetric shape comprising: 
            a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm, 
                b. the SiC granules defining a volumetric shape having a structural integrity; 
                c. a binder, wherein the binder binds the SiC granules, whereby the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule; 
                d. the volumetric shape defining a void; and, 
                e. the volumetric shape having pores defining a porosity, wherein the volumetric shape has an apparent density of less than 3.0 g/cc. 
               |