US 12,330,340 B2
Method of manufacturing semiconductor wafers
Sodai Nomura, Kariya (JP); Tomoki Kawazu, Kariya (JP); Bahman Soltani, Kariya (JP); Yutaro Isshiki, Kariya (JP); Nobuyuki Nunome, Kariya (JP); Shiro Okita, Kariya (JP); and Riku Onishi, Kariya (JP)
Assigned to DENSO CORPORATION, Kariya (JP)
Filed by DENSO CORPORATION, Kariya (JP)
Filed on Sep. 1, 2022, as Appl. No. 17/900,950.
Claims priority of application No. 2021-143929 (JP), filed on Sep. 3, 2021.
Prior Publication US 2023/0073379 A1, Mar. 9, 2023
Int. Cl. B28D 5/00 (2006.01); B23K 26/53 (2014.01); B23K 103/00 (2006.01)
CPC B28D 5/0011 (2013.01) [B23K 26/53 (2015.10); B28D 5/0052 (2013.01); B23K 2103/56 (2018.08)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing semiconductor wafers, the method comprising steps of:
preparing an ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and
applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, and/or
applying a dynamic force to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, the ingot thickness direction defining a thickness of the ingot connecting the first major surface and the second major surface and being parallel to a center axis of the ingot, thereby peeling a wafer precursor from the ingot, the wafer precursor being formed in a layer-shape between the first major surface and the peeling layer, wherein
a first supporting part and a second supporting part are provided to support the ingot such that the first supporting part supports an entire surface of the first major surface and the second supporting part supports an entire surface of the second major surface.