US 12,330,228 B2
Method of using processing oven
Lei Jing, Santa Clara, CA (US); M Ziaul Karim, San Jose, CA (US); Kenneth Sautter, Sunnyvale, CA (US); and Kang Song, San Jose, CA (US)
Assigned to YIELD ENGINEERING SYSTEMS, INC., Fremont, CA (US)
Filed by Yield Engineering Systems, Inc., Fremont, CA (US)
Filed on Nov. 6, 2023, as Appl. No. 18/387,093.
Application 18/387,093 is a continuation of application No. 17/872,320, filed on Jul. 25, 2022, granted, now 11,850,672.
Application 17/872,320 is a continuation of application No. 17/692,760, filed on Mar. 11, 2022, granted, now 11,465,225, issued on Oct. 11, 2022.
Application 17/692,760 is a continuation in part of application No. 17/463,012, filed on Aug. 31, 2021, granted, now 11,296,049, issued on Apr. 5, 2022.
Prior Publication US 2024/0066618 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. B23K 1/015 (2006.01); B23K 1/00 (2006.01); B23K 1/008 (2006.01); B23K 1/012 (2006.01); B23K 3/08 (2006.01); B23K 101/40 (2006.01); B23K 101/42 (2006.01); H01L 21/60 (2006.01); H01L 23/00 (2006.01)
CPC B23K 1/015 (2013.01) [B23K 1/008 (2013.01); B23K 3/085 (2013.01); H01L 24/742 (2013.01); H01L 24/75 (2013.01); B23K 1/0016 (2013.01); B23K 1/012 (2013.01); B23K 2101/40 (2018.08); B23K 2101/42 (2018.08); H01L 2021/60007 (2013.01); H01L 2021/60135 (2013.01); H01L 2021/6027 (2013.01); H01L 2224/75272 (2013.01); H01L 2224/75283 (2013.01); H01L 2224/75802 (2013.01); H01L 2224/76272 (2013.01); H01L 2224/76802 (2013.01); H01L 2224/77272 (2013.01); H01L 2224/77802 (2013.01); H01L 2224/78272 (2013.01); H01L 2224/78802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of using a processing oven, comprising:
disposing at least one substrate on a rotatable spindle positioned in a chamber of the oven;
rotating the spindle and the at least one substrate about a central axis of the chamber;
activating a heating assembly disposed above the at least one substrate to increase a temperature of the at least one substrate to a first temperature while the at least one substrate is rotating on the spindle in the chamber;
after increasing the temperature, admitting a chemical vapor into the chamber while the at least one substrate is rotating on the spindle in the chamber;
after admitting the chemical vapor, further increasing the temperature of the at least one substrate to a second temperature higher than the first temperature while the at least one substrate is rotating on the spindle in the chamber;
and
after further increasing the temperature, cooling the at least one substrate in the chamber.