US 12,010,933 B2
Via structure and methods of forming the same
Wei-Chieh Huang, Hsinchu County (TW); Jieh-Jang Chen, Hsinchu County (TW); Feng-Jia Shiu, Hsinchu County (TW); and Chern-Yow Hsu, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Oct. 31, 2022, as Appl. No. 17/977,317.
Application 17/977,317 is a continuation of application No. 17/306,626, filed on May 3, 2021, granted, now 11,489,115.
Application 17/306,626 is a continuation of application No. 16/594,306, filed on Oct. 7, 2019, granted, now 10,998,498, issued on May 4, 2021.
Application 16/594,306 is a continuation of application No. 15/884,505, filed on Jan. 31, 2018, granted, now 10,439,135, issued on Oct. 8, 2019.
Claims priority of provisional application 62/583,866, filed on Nov. 9, 2017.
Prior Publication US 2023/0059026 A1, Feb. 23, 2023
Int. Cl. H01L 21/3105 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8418 (2023.02) [H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/76879 (2013.01); H10B 63/80 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first dielectric layer over a first electrode layer;
forming a patterned second dielectric layer over the first dielectric layer;
forming a sacrificial layer on the patterned second dielectric layer;
forming a trench through the sacrificial layer that exposes the first electrode layer;
forming a conductive material in the trench; and
after forming the conductive material in the trench, removing at least a first portion of the sacrificial layer and at least a first portion of the patterned second dielectric layer to expose a portion of the first dielectric layer.