US 12,010,931 B2
Resistive random-access memory (RRAM) device and forming method thereof
Chia-Ching Hsu, Yunlin County (TW); Wang Xiang, Singapore (SG); and Shen-De Wang, Hsinchu County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 9, 2021, as Appl. No. 17/196,979.
Claims priority of application No. 110103697 (TW), filed on Feb. 1, 2021.
Prior Publication US 2022/0246845 A1, Aug. 4, 2022
Int. Cl. H01L 45/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 63/845 (2023.02); H10N 70/021 (2023.02); H10N 70/066 (2023.02); H10N 70/8833 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A resistive random-access memory (RRAM) device, comprising:
a bottom electrode line directly on a first metal structure;
a top electrode island disposed beside the bottom electrode line;
a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island; and
a second metal structure directly contacting the resistive material and the top electrode island.