CPC H10N 70/841 (2023.02) [H10B 63/845 (2023.02); H10N 70/021 (2023.02); H10N 70/066 (2023.02); H10N 70/8833 (2023.02)] | 10 Claims |
1. A resistive random-access memory (RRAM) device, comprising:
a bottom electrode line directly on a first metal structure;
a top electrode island disposed beside the bottom electrode line;
a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island; and
a second metal structure directly contacting the resistive material and the top electrode island.
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