CPC H10N 70/828 (2023.02) [H10N 70/026 (2023.02); H10N 70/231 (2023.02); H10N 70/823 (2023.02); H10N 70/8828 (2023.02)] | 20 Claims |
1. A semiconductor structure comprising:
a phase change memory (PCM) element horizontally and electrically connecting a first contact and a second contact; and
a projection liner encapsulating the PCM element including a backside surface of the PCM element to position a portion of the projection liner directly between the PCM element and the second contact.
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