US 12,010,930 B2
Wrap-around projection liner for AI device
Injo Ok, Loudonville, NY (US); Hsueh-Chung Chen, Cohoes, NY (US); Mary Claire Silvestre, Clifton Park, NY (US); and Yann Mignot, Slingerlands, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Sep. 9, 2021, as Appl. No. 17/470,003.
Prior Publication US 2023/0070462 A1, Mar. 9, 2023
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/828 (2023.02) [H10N 70/026 (2023.02); H10N 70/231 (2023.02); H10N 70/823 (2023.02); H10N 70/8828 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a phase change memory (PCM) element horizontally and electrically connecting a first contact and a second contact; and
a projection liner encapsulating the PCM element including a backside surface of the PCM element to position a portion of the projection liner directly between the PCM element and the second contact.