CPC H10N 70/245 (2023.02) [C23C 16/40 (2013.01); C23C 16/403 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H10N 70/023 (2023.02); H10N 70/826 (2023.02); H10N 70/8836 (2023.02)] | 18 Claims |
1. A memory device comprising:
a first electrode;
a resistance change layer disposed on the first electrode and including lithium, aluminum, and oxygen; and
a second electrode disposed on the resistance change layer,
wherein the resistance change layer has a lithium content ratio Li/(Li+Al) that is more than 40 at % and less than 60 at %.
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