US 12,010,849 B2
Semiconductor device having word line separation layer
Jiye Noh, Incheon (KR); Jinsoo Lim, Yongin-si (KR); Daehyun Jang, Hwaseong-si (KR); Jisung Cheon, Ansan-si (KR); and Sangjun Hong, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 23, 2022, as Appl. No. 17/934,959.
Application 17/934,959 is a continuation of application No. 16/926,045, filed on Jul. 10, 2020, granted, now 11,456,316.
Claims priority of application No. 10-2019-0173236 (KR), filed on Dec. 23, 2019.
Prior Publication US 2023/0032392 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/27 (2023.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 41/49 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/481 (2013.01); H01L 23/528 (2013.01); H10B 43/10 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate including a cell array area and a connecting area, the connecting area including a through-via area;
a peripheral circuit structure disposed on the substrate; a lower stack disposed on the peripheral circuit structure and an upper stack disposed on the lower stack, the lower stack including a plurality of lower word lines spaced apart from each other in a vertical direction;
a plurality of channel structures extending through the lower stack and the upper stack in the cell array area;
a plurality of dummy vertical structures extending through the lower stack and the upper stack in the connecting area;
a pair of first separation structures extending vertically through the lower stack and the upper stack and extending in a first horizontal direction, the pair of first separation structures being spaced apart from each other in a second horizontal direction crossing the first horizontal direction; and
a second separation structure disposed at an upper portion of the lower stack and crossing the pair of first separation structures when viewed in a plan view, the second separation structure extending vertically through at least one of the lower word lines and extending in the second horizontal direction.