US 12,010,843 B2
Non-volatile storage device
Masaaki Higuchi, Yokkaichi Mie (JP); Masaru Kito, Kuwana Mie (JP); and Masao Shingu, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Mar. 18, 2021, as Appl. No. 17/205,329.
Application 15/897,623 is a division of application No. 15/398,230, filed on Jan. 4, 2017, granted, now 9,929,176, issued on Mar. 27, 2018.
Application 17/205,329 is a continuation of application No. 15/897,623, filed on Feb. 15, 2018, granted, now 10,985,173.
Application 15/398,230 is a continuation of application No. 14/194,757, filed on Mar. 2, 2014, granted, now 9,583,504, issued on Feb. 28, 2017.
Claims priority of application No. 2013-187523 (JP), filed on Sep. 10, 2013.
Prior Publication US 2021/0210507 A1, Jul. 8, 2021
Int. Cl. H01L 27/1157 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage device, comprising:
a first layer;
a second layer over the first layer;
a stacked body including a plurality of conductive films stacked above the second layer; and
a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer, wherein
the semiconductor pillar includes a semiconductor film provided along an extending direction of the semiconductor pillar and a memory film provided on a periphery of the semiconductor film,
the memory film includes a first portion between the stacked body and the semiconductor film in a direction perpendicular to the extending direction and a second portion between the second layer and the semiconductor film in the direction perpendicular to the extending direction, and
a thickness of the second portion of the memory film in the semiconductor pillar is greater than a thickness of the first portion of the memory film in the semiconductor pillar.