US 12,010,839 B2
Semiconductor device including contact structure and method of manufacturing semiconductor device
Nam Jae Lee, Cheongju-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Oct. 20, 2022, as Appl. No. 17/970,360.
Application 17/970,360 is a continuation of application No. 16/775,186, filed on Jan. 28, 2020, granted, now 11,508,740.
Claims priority of application No. 10-2019-0089880 (KR), filed on Jul. 24, 2019.
Prior Publication US 2023/0045057 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 41/41 (2023.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H10B 20/00 (2023.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); G11C 16/04 (2006.01)
CPC H10B 41/41 (2023.02) [H01L 23/535 (2013.01); H01L 29/41725 (2013.01); H10B 20/60 (2023.02); H10B 43/40 (2023.02); G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 43/10 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a transistor over a substrate;
forming a plurality of first contact structures;
forming plug-shaped second contact structures electrically connected to a first number of the plurality of first contact structures, respectively;
forming a slit-shaped second contact structure to extend in a horizontal direction and directly connected to upper surfaces of first contact structures adjacent in the first direction, among the plurality of first contact structures, to electrically connect the first contact structures adjacent in the first direction to each other; and
forming a third contact structure to be electrically connected to sidewalls of the plug-shaped second contact structures, adjacent in the first direction,
wherein the plurality of first contact structures are connected to the transistor, and
wherein the transistor includes a source region and a drain region, the source region is connected to the slit-shaped second contact structure through one of a second number of the plurality of first contact structures, and the drain region is connected to the third contact structure through one of a first number of the plurality of first contact structures and one of the plug-shaped second contact structures.