US 12,009,822 B2
Semiconductor device
Kazuhiro Kawahara, Tokyo (JP); Shinji Sakai, Tokyo (JP); and Teruaki Nagahara, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Apr. 14, 2022, as Appl. No. 17/720,387.
Claims priority of application No. 2021-145586 (JP), filed on Sep. 7, 2021.
Prior Publication US 2023/0070322 A1, Mar. 9, 2023
Int. Cl. H03K 3/012 (2006.01)
CPC H03K 3/012 (2013.01) 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first terminal inputting a first voltage from outside the semiconductor device;
a drive unit using the first voltage as a power supply voltage and outputting a drive signal;
a switching device driven by the drive signal;
a second terminal separated from the first terminal and inputting a second voltage, the second voltage being input even when the first voltage is turned off;
a comparator using a voltage generated from the second voltage as a power supply voltage and outputting an output signal when a voltage generated from the first voltage is less than or equal to a reference potential, the voltage generated from the first voltage being applied to an input terminal of the comparator; and
a shut-off switch shutting off a transmission of the drive signal to the switching device from the drive unit in response to the output signal.