CPC H03K 17/785 (2013.01) [G02B 6/4295 (2013.01); H01L 31/11 (2013.01); H03K 17/168 (2013.01); H04B 10/25 (2013.01)] | 16 Claims |
1. A switching device comprising:
an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate; and
a stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.
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