US 12,009,806 B2
Frequency control of spurious shear horizontal mode by adding high velocity layer in a lithium niobate filter
Tomoya Komatsu, Irvine, CA (US)
Assigned to SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed by SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed on Jul. 7, 2021, as Appl. No. 17/368,948.
Application 17/368,948 is a continuation of application No. 16/439,886, filed on Jun. 13, 2019, granted, now 11,095,269.
Claims priority of provisional application 62/693,027, filed on Jul. 2, 2018.
Claims priority of provisional application 62/684,330, filed on Jun. 13, 2018.
Prior Publication US 2021/0336605 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/64 (2006.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01); H03H 9/72 (2006.01)
CPC H03H 9/6483 (2013.01) [H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/72 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first surface acoustic wave (SAW) resonator and a second SAW resonator, each including interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators being formed on a same piezoelectric substrate, the first SAW resonator having IDT electrodes with a different finger pitch than the IDT electrodes of the second SAW resonator;
a dielectric material layer disposed on the IDT electrodes of the first and second SAW resonators; and
a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes of the first SAW resonator and within the dielectric material layer disposed on the IDT electrodes of the second SAW resonator, the dielectric material layer disposed on the IDT electrodes of the first SAW resonator having a same normalized thickness as a normalized thickness of the dielectric material layer disposed on the IDT electrodes of the second SAW resonator, a normalized thickness of the high velocity layer disposed within the dielectric material layer covering the IDT electrodes of the first SAW resonator being different from a normalized thickness of the high velocity layer disposed within the dielectric material layer covering IDT electrodes of the second SAW resonator.