US 12,009,793 B2
Dual-mode power amplifier for wireless communication
Ruifeng Sun, Charlottesville, VA (US); Sherry Wu, Austin, TX (US); Michael S. Johnson, Austin, TX (US); and Vitor Pereira, Austin, TX (US)
Assigned to Silicon Laboratories Inc., Austin, TX (US)
Filed by Silicon Laboratories Inc., Austin, TX (US)
Filed on Feb. 28, 2023, as Appl. No. 18/175,593.
Application 18/175,593 is a division of application No. 17/363,049, filed on Jun. 30, 2021, granted, now 11,646,705.
Prior Publication US 2023/0208368 A1, Jun. 29, 2023
Int. Cl. H03F 3/24 (2006.01); H03F 1/02 (2006.01); H04B 1/04 (2006.01); H04L 27/12 (2006.01)
CPC H03F 3/245 (2013.01) [H03F 1/0233 (2013.01); H04B 1/04 (2013.01); H04L 27/12 (2013.01); H03F 2200/105 (2013.01); H03F 2200/451 (2013.01); H04B 2001/0408 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A dual-mode power amplifier comprising:
a transistor stack comprising a first plurality of metal oxide semiconductor field effect transistors (MOSFETs) of a first polarity and a second plurality of MOSFETs of a second polarity;
a first buffer pair to receive a variable envelope signal of a first modulation scheme and provide the variable envelope signal to a gate terminal of a first MOSFET of the first plurality of MOSFETs and a gate terminal of a first MOSFET of the second plurality of MOSFETs; and
a second buffer pair to receive a constant envelope signal of a second modulation scheme and provide the constant envelope signal to the gate terminal of the first MOSFET of the first plurality of MOSFETs and the gate terminal of the first MOSFET of the second plurality of MOSFETs.