US 12,009,658 B2
Unidirectional transient voltage suppression device
Jean-Michel Simonnet, Veretz (FR); David Jouve, St-Antoine-du-Rocher (FR); and Frédéric Lanois, Tours (FR)
Assigned to STMicroelectronics (Tours) SAS, Tours (FR)
Filed by STMicroelectronics (Tours) SAS, Tours (FR)
Filed on Apr. 29, 2022, as Appl. No. 17/661,352.
Claims priority of application No. 2104856 (FR), filed on May 7, 2021.
Prior Publication US 2022/0360072 A1, Nov. 10, 2022
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01); H02H 9/00 (2006.01)
CPC H02H 9/046 (2013.01) [H01L 27/0255 (2013.01); H02H 9/005 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A transient voltage suppression device comprising:
a single crystal semiconductor substrate doped with a first conductivity type and comprising first and second surfaces opposing each other;
a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending into the substrate from the first surface;
a first electrically conductive electrode on the first surface contacting the semiconductor region;
a second electrically conductive electrode on the second surface contacting the substrate;
a first interface between the substrate and the semiconductor region forming a junction of a transient voltage suppression diode; and
a second interface between the first electrically conductive electrode and the semiconductor region forming a junction of a Schottky diode.