CPC H02H 9/046 (2013.01) [H01L 27/0255 (2013.01); H02H 9/005 (2013.01)] | 21 Claims |
1. A transient voltage suppression device comprising:
a single crystal semiconductor substrate doped with a first conductivity type and comprising first and second surfaces opposing each other;
a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending into the substrate from the first surface;
a first electrically conductive electrode on the first surface contacting the semiconductor region;
a second electrically conductive electrode on the second surface contacting the substrate;
a first interface between the substrate and the semiconductor region forming a junction of a transient voltage suppression diode; and
a second interface between the first electrically conductive electrode and the semiconductor region forming a junction of a Schottky diode.
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