US 12,009,514 B2
Perovskite material, method of preparing the same, and secondary battery including the perovskite material
Sangbok Ma, Suwon-si (KR); Hyukjae Kwon, Suwon-si (KR); Hyunpyo Lee, Seoul (KR); Donghwa Seo, Burlington, MA (US); and Dongmin Im, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 30, 2019, as Appl. No. 16/587,116.
Claims priority of provisional application 62/744,614, filed on Oct. 11, 2018.
Claims priority of application No. 10-2018-0122041 (KR), filed on Oct. 12, 2018.
Prior Publication US 2020/0119346 A1, Apr. 16, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01M 4/485 (2010.01); C01G 37/00 (2006.01); C01G 45/12 (2006.01); C01G 51/00 (2006.01); C01G 53/00 (2006.01); C01G 55/00 (2006.01)
CPC H01M 4/485 (2013.01) [C01G 37/006 (2013.01); C01G 45/1264 (2013.01); C01G 51/70 (2013.01); C01G 53/70 (2013.01); C01G 55/002 (2013.01); C01P 2002/34 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A perovskite material represented by Formula 1:
LixAyMzO3  Formula 1
wherein, in Formula 1, 0.1≤x≤1, 0≤y≤1, 0<x+y<1, 0≤z≤1.5, and 0≤δ≤1,
A is La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, or a combination thereof, and
M is Ni, Pd, Pb, Fe, Ir, Co, Rh, Mn, Cr, Ru, Re, Sn, V, Ge, W, Mo, Hf, U, Th, Bi, Li, H, Na, K, Rb, Cs, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Mg, Al, Si, Sc, Zn, Ga, Ag, Cd, In, Sb, Pt, Au, or a combination thereof,
wherein the perovskite material has a diffraction peak at a diffraction angle 2θ of 23.0°±2.5°, when analyzed by an X-ray diffraction using CuKα radiation.