US 12,009,456 B2
Light-emitting diode structure and manufacturing method thereof
Bo-Wei Wu, MiaoLi County (TW); Yu-Yun Lo, MiaoLi County (TW); Shiang-Ning Yang, MiaoLi County (TW); and Chang-Feng Tsai, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on Nov. 6, 2021, as Appl. No. 17/520,628.
Claims priority of application No. 110133941 (TW), filed on Sep. 13, 2021.
Prior Publication US 2023/0083176 A1, Mar. 16, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/22 (2013.01) [H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/32 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A manufacturing method of a light-emitting diode structure, the method comprising:
growing a semiconductor stack layer on a first substrate, wherein the semiconductor stack layer is divided into a first portion and a second portion, and comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially grown on the first substrate;
providing a force applying means to physically break the first portion and the second portion apart from each other, wherein the first portion comprises a plurality of light-emitting diode structures separated from each other; and
before providing the force applying means to break the first portion and the second portion apart from each other, irradiating, by a laser, a boundary between the first portion and the first substrate or a boundary between the second portion and the first substrate to reduce a binding force between the first portion and the first substrate or reduce a binding force between the second portion and the first substrate.