US 12,009,446 B2
Solar cell, method for producing same and solar cell module
Ding Yu, Zhejiang (CN); Wenqi Li, Zhejiang (CN); Shijie Zhao, Zhejiang (CN); Xiaowen Zhang, Zhejiang (CN); Jialei Chai, Zhejiang (CN); Xinyu Zhang, Zhejiang (CN); Hao Jin, Zhejiang (CN); and Jie Yang, Zhejiang (CN)
Assigned to Shanghai Jinko Green Energy Enterprise Management Co., Ltd., Shanghai (CN); and Zhejiang Jinko Solar Co., Ltd., Haining (CN)
Filed by SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed on Sep. 23, 2021, as Appl. No. 17/483,746.
Claims priority of application No. 202110989144.4 (CN), filed on Aug. 26, 2021.
Prior Publication US 2023/0066259 A1, Mar. 2, 2023
Int. Cl. H01L 31/048 (2014.01); H01L 31/054 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC H01L 31/048 (2013.01) [H01L 31/0543 (2014.12); H01L 31/068 (2013.01); H01L 31/1824 (2013.01); H01L 31/1868 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a substrate having a front surface and a rear surface opposite to the front surface;
a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and
a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5; and
wherein the ratios y/x, n/m and j/i are atomic ratios;
wherein the solar cell further comprises a fourth passivation layer formed on a side of the doped conductive layer facing away from the substrate, the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8; and
wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer.