US 12,009,440 B2
Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
Gang Chen, Yiwu (CN); Wenli Xu, Yiwu (CN); Kaifu Qiu, Yiwu (CN); Yongqian Wang, Yiwu (CN); and Xinqiang Yang, Yiwu (CN)
Assigned to Solarlab Aiko Europe GmbH, Freiburg (DE)
Filed by Solarlab Aiko Europe GmbH, Freiburg (DE)
Filed on Sep. 29, 2023, as Appl. No. 18/374,819.
Application 18/374,819 is a continuation in part of application No. 18/110,915, filed on Feb. 17, 2023, granted, now 11,837,671.
Application 18/110,915 is a continuation in part of application No. 17/509,049, filed on Oct. 24, 2021, granted, now 11,749,761, issued on Sep. 5, 2023.
Claims priority of application No. 202110828468.X (CN), filed on Jul. 22, 2021.
Prior Publication US 2024/0021741 A1, Jan. 18, 2024
Int. Cl. H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 31/02167 (2013.01) [H01L 31/02363 (2013.01); H01L 31/035281 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A cell assembly, comprising:
a silicon substrate;
a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, wherein an orthogonal projection of at least a portion of the second dielectric layer onto the silicon substrate is disposed between orthogonal projections of the first doped region and the second doped region along a lateral direction of the silicon substrate; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
the first doped region comprises a first doped layer, a passivation layer, and a second doped layer;
the first doped layer of the first doped region is a part of the silicon substrate;
the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and
the second doped layer of the first doped region is provided on the passivation layer of the first doped region, and is connected to the first doped layer of the first doped region through the passivation layer of the first doped region.