US 12,009,415 B2
High electron mobility transistor and method for fabricating the same
Kuo-Hsing Lee, Hsinchu County (TW); Sheng-Yuan Hsueh, Tainan (TW); Chien-Liang Wu, Tainan (TW); and Kuo-Yu Liao, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 8, 2023, as Appl. No. 18/144,811.
Application 18/144,811 is a division of application No. 16/994,646, filed on Aug. 16, 2020, granted, now 11,688,800.
Claims priority of application No. 202010704978.1 (CN), filed on Jul. 21, 2020.
Prior Publication US 2023/0275146 A1, Aug. 31, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/778 (2013.01) [H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
a mesa isolation on the HEMT region;
a HEMT on the mesa isolation;
a capacitor on the capacitor region; and
a buffer layer between the mesa isolation, the capacitor, and the substrate, wherein a bottom electrode of the capacitor contacts the buffer layer directly.