CPC H01L 29/778 (2013.01) [H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] | 11 Claims |
1. A semiconductor device, comprising:
a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
a mesa isolation on the HEMT region;
a HEMT on the mesa isolation;
a capacitor on the capacitor region; and
a buffer layer between the mesa isolation, the capacitor, and the substrate, wherein a bottom electrode of the capacitor contacts the buffer layer directly.
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