CPC H01L 29/6681 (2013.01) [H01L 23/535 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a substrate;
a semiconductor fin extending along a first direction on the substrate;
a dielectric fin disposed on the substrate and extending substantially parallel to the semiconductor fin;
a gate structure across the semiconductor fin and the dielectric fin; and
gate spacers disposed on opposite sidewalls of the gate structure, wherein an interface between the gate structure and the dielectric fin is lower than an interface between the dielectric fin and one of the gate spacers.
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