US 12,009,400 B2
Device providing multiple threshold voltages and methods of making the same
Yung-Hsiang Chan, Taichung (TW); Shan-Mei Liao, Hsinchu (TW); Wen-Hung Huang, Hsin-Chu (TW); Jian-Hao Chen, Hsinchu (TW); Kuo-Feng Yu, Hsinchu County (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Sep. 1, 2021, as Appl. No. 17/464,091.
Claims priority of provisional application 63/149,315, filed on Feb. 14, 2021.
Prior Publication US 2022/0262928 A1, Aug. 18, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/823462 (2013.01); H01L 21/823857 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/513 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a dielectric layer on a semiconductor workpiece;
forming a first patterned layer of a first dipole material on the dielectric layer;
performing a first thermal drive-in operation at a first temperature to form a diffusion feature in a first portion of the dielectric layer beneath the first patterned layer;
forming a second patterned layer of a second dipole material, a first section of the second patterned layer being on the diffusion feature and a second section of the second patterned layer being offset from the diffusion feature;
performing a second thermal drive-in operation at a second temperature, wherein the second temperature is less than the first temperature; and
forming a gate electrode layer on the dielectric layer.