US 12,009,395 B2
Self-aligned block for vertical FETs
Ruilong Xie, Niskayuna, NY (US); Junli Wang, Slingerlands, NY (US); Choonghyun Lee, Chigasaki (JP); and Alexander Reznicek, Troy, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 17, 2021, as Appl. No. 17/404,014.
Prior Publication US 2023/0055297 A1, Feb. 23, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41741 (2013.01) [H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/42376 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a channel fin between a bottom source/drain (S/D) region and a top S/D region;
a gate around the channel fin, the gate comprising a first gate portion directly connected to a first side of the channel fin and a second gate portion directly connected to a second side of the channel fin, the first gate portion comprising a first sidewall and a second sidewall, and the second gate portion comprising a third sidewall;
a top metallization upon the top S/D region;
a first contact metallization connected to the first sidewall of the gate;
a second contact metallization connected to the bottom S/D region;
a vertical liner comprising a first vertical liner portion directly connected to at least the second sidewall of the gate and directly connected to a sidewall of the first contact metallization and a second vertical liner portion directly connected to at least the third sidewall of the gate and directly connected to a sidewall of the second contact metallization; and
a top spacer between the gate and the top S/D region and in direct contact with the channel fin, the top spacer comprising a first sidewall that is in direct contact with the first vertical liner portion and a second sidewall that is in direct contact with the second vertical liner portion.