US 12,009,378 B2
Solid-state imaging device and electronic apparatus
Tetsuya Yamaguchi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTORSOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/250,237
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Apr. 3, 2019, PCT No. PCT/JP2019/014799
§ 371(c)(1), (2) Date Dec. 21, 2020,
PCT Pub. No. WO2020/003681, PCT Pub. Date Jan. 2, 2020.
Claims priority of application No. 2018-124550 (JP), filed on Jun. 29, 2018.
Prior Publication US 2021/0126031 A1, Apr. 29, 2021
Int. Cl. H01L 27/146 (2006.01); H04N 25/70 (2023.01)
CPC H01L 27/14621 (2013.01) [H01L 27/14627 (2013.01); H04N 25/70 (2023.01)] 7 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a pixel array unit that includes:
a plurality of pixels one-dimensionally or two-dimensionally arrayed;
color filters;
a semiconductor substrate; and
a partition layer between the color filters, wherein
the partition layer includes a first layer on a light incident side of the pixel array unit and a second layer on a semiconductor substrate side,
the first layer has a first width on the light incident side and a third width on the semiconductor substrate side,
the second layer has a fourth width on the light incident side and a second width on the semiconductor substrate side,
the second width is different from the first width,
the first layer includes a first metal layer and a first oxide film,
the first oxide film is on the first metal layer,
the second layer includes a second metal layer and a second oxide film, and
the second oxide film is on the second metal layer.