US 12,009,364 B2
Semiconductor device and manufacture thereof
Te-Hsin Chiu, Hsinchu (TW); Shih-Wei Peng, Hsinchu (TW); Meng-Hung Shen, Hsinchu (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 8, 2023, as Appl. No. 18/313,971.
Application 18/313,971 is a division of application No. 17/232,293, filed on Apr. 16, 2021, granted, now 11,646,314.
Prior Publication US 2023/0275096 A1, Aug. 31, 2023
Int. Cl. H01L 29/76 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, the method comprising:
forming a first recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a region comprising a semiconductor material, the first recess having a first surface portion separated by a distance in a first direction from the region of semiconductor material by a portion of the first dielectric material;
depositing a second dielectric material in the first recess to form a second surface portion oriented at an oblique angle from the first surface portion; and
depositing a conductive or semiconductive material in the first recess.