US 12,009,363 B2
Method for forming source/drain contacts
Shao-Ming Koh, Hsinchu (TW); Chen-Ming Lee, Taoyuan County (TW); Fu-Kai Yang, Hsinchu (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 14, 2021, as Appl. No. 17/347,066.
Application 17/347,066 is a division of application No. 15/867,058, filed on Jan. 10, 2018, granted, now 11,037,924.
Claims priority of provisional application 62/589,080, filed on Nov. 21, 2017.
Prior Publication US 2021/0313324 A1, Oct. 7, 2021
Int. Cl. H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/4757 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/485 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01)
CPC H01L 27/092 (2013.01) [H01L 21/02057 (2013.01); H01L 21/28525 (2013.01); H01L 21/302 (2013.01); H01L 21/30608 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); H01L 21/47573 (2013.01); H01L 21/76801 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 23/485 (2013.01); H01L 27/0924 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an n-type transistor region including:
a first gate stack;
a first gate spacer over sidewalls of the first gate stack;
an n-type epitaxial feature in a source/drain (S/D) region of the n-type transistor region; and
a first metal silicide layer over the n-type epitaxial feature; and
a p-type transistor region including:
a second gate stack;
a second gate spacer over sidewalls of the second gate stack;
a p-type epitaxial feature in an S/D region of the p-type transistor region;
a dopant-containing implant layer over the p-type epitaxial feature, wherein the dopant-containing implant layer includes a metallic dopant; and
a second metal silicide layer over the dopant-containing implant layer,
wherein a top surface of the n-type epitaxial feature has a first concave profile, a top surface of the p-type epitaxial feature has a second concave profile, and a lowest point of the first concave profile is below a lowest point of the second concave profile.