US 12,009,361 B2
Protection devices with trigger devices and methods of formation thereof
Vadim Valentinovic Vendt, Munich (DE); Joost Willemen, Munich (DE); Andre Schmenn, Sachsenkam (DE); and Damian Sojka, Regensburg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 23, 2023, as Appl. No. 18/100,043.
Application 16/919,833 is a division of application No. 14/817,928, filed on Aug. 4, 2015, granted, now 10,741,548.
Application 18/100,043 is a continuation of application No. 16/919,833, filed on Jul. 2, 2020, granted, now 11,600,615.
Claims priority of provisional application 62/146,777, filed on Apr. 13, 2015.
Prior Publication US 2023/0163123 A1, May 25, 2023
Int. Cl. H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/74 (2006.01); H01L 29/861 (2006.01)
CPC H01L 27/067 (2013.01) [H01L 27/0262 (2013.01); H01L 29/6609 (2013.01); H01L 29/861 (2013.01); H01L 29/66371 (2013.01); H01L 29/732 (2013.01); H01L 29/7404 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a first vertical protection device comprising a thyristor in a substrate;
forming a first lateral trigger element for triggering the first vertical protection device in the substrate; and
forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device;
forming a second vertical protection device comprising a second thyristor in the substrate;
forming a second lateral trigger element for triggering the second vertical protection device in the substrate; and
forming a second electrical path in the substrate to electrically couple the second lateral trigger element with the second vertical protection device,
wherein the first and second vertical protection devices form a bidirectional transient voltage suppressor device,
wherein the first and second lateral trigger elements are each configured as bipolar transistors.