US 12,009,357 B2
Diode-triggered bidirectional silicon controlled rectifier and circuit
Pan Mao, Hefei (CN); Yingtao Zhang, Hefei (CN); Junjie Liu, Hefei (CN); Lingxin Zhu, Hefei (CN); Bin Song, Hefei (CN); Qian Xu, Hefei (CN); and Tieh-Chiang Wu, Hefei (CN)
Assigned to Changxin Memory Technologies, Inc., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 18, 2021, as Appl. No. 17/451,173.
Application 17/451,173 is a continuation of application No. PCT/CN2021/109982, filed on Aug. 2, 2021.
Claims priority of application No. 202110833144.5 (CN), filed on Jul. 22, 2021.
Prior Publication US 2023/0022588 A1, Jan. 26, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 29/747 (2006.01); H01L 29/87 (2006.01)
CPC H01L 27/0248 (2013.01) [H01L 29/747 (2013.01); H01L 29/87 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A diode-triggered bidirectional silicon controlled rectifier, comprising a silicon controlled rectifier (SCR) and a diode string, the silicon controlled rectifier having an anode and a cathode and comprising:
a P-type substrate;
a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well;
a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and
an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well;
wherein the first N-type doped region and the third P-type doped region are electrically connected with the anode; the third N-type doped region and the second P-type doped region are electrically connected with the cathode; the second N-type doped region is electrically connected with a positive electrode of the diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.