CPC H01L 23/585 (2013.01) [H01L 23/528 (2013.01); H01L 23/53209 (2013.01)] | 19 Claims |
1. An integrated circuit (IC) die, comprising:
a substrate having a semiconductor surface layer with circuitry configured for at least one function including a plurality of metal interconnect levels thereon comprising a top metal interconnect level and a bottom metal interconnect level, with a passivation layer comprising a dielectric material on the top metal interconnect level;
a scribe street around a periphery of the IC die, the scribe street comprising:
a scribe seal utilizing at least two of the plurality of metal interconnect levels;
an inner metal meander stop ring comprising at least the top metal interconnect level located outside the scribe seal, wherein the scribe seal and the inner metal meander stop ring are separated by a first separation gap, and
an outer metal meander stop ring comprising at least the top metal interconnect level located outside the inner metal stop ring, wherein the outer stop ring and the inner stop ring are separated by a second separation gap.
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